Indium(III) arsenide



Indium(III) arsenide
Other names indium arsenide, indium monoarsenide
Identifiers
CAS number 1303-11-3
Properties
Molecular formula InAs
Molar mass 189.74 g.mol-1
Density 5680 kg.m-3
Melting point

942 °C

Solubility in other solvents insoluble
Except where noted otherwise, data are given for
materials in their standard state
(at 25 °C, 100 kPa)
Infobox disclaimer and references

Indium arsenide, InAs, or indium monoarsenide, is a arsenic. It has the appearance of grey cubic crystals with melting point 942 °C.

Indium arsenide is used for construction of diode lasers.

Indium arsenide is similar to gallium arsenide.

Indium arsenide is sometimes used together with indium gallium nitride.

Quantum dots can be formed in a monolayer of indium arsenide on lattice constants of the materials create tensions in the surface layer, which in turn leads to formation of the quantum dots.[1] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.

See also

References

  1. ^ [1]
 
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