Neutron depth profiling



Neutron depth profiling (NDP) is a near-surface analysis technique that is commonly used to obtain profiles of concentration as a function of depth for certain technologically important light elements in nearly any substrate. The technique was first proposed by Ziegler et al. to determine the concentration profiles of silicon substrates, and later improved by Biersack and coworkers to much of its existing capabilities.

Neutron depth

In NDP, a thermal or cold stopping power correlations.

Profiling

Conventionally, the residual energies of charged particles and recoil nuclei have been measured by a silicon charged-particle detector; most commonly either a surface barrier detector (SBD) or a passivated implanted planar silicon (PIPS) detector. In this configuration, the semiconductor detector is placed opposite to the surface of the sample being analyzed, and an energy spectrum of charged particles emitted by the neutron-induced reaction is acquired.

See also

References

  • J.F. Ziegler, G.W. Cole and J.E.E. Baglin, (1972), J. Appl. Phys., 43 (9), p. 3809.
  • D. Fink, J.P. Biersack and H. Liebl, in Ion Implantation: Equipment and Techniques, (1983), H. Ryssel and H. Glawischnig, eds., Springer-Verlag, Berlin, pp. 318–326.
  • R.G. Downing, R.K. Fleming, J.K. Langland and D.H. Vincent, (1983), Nuc. Inst. Meth., 218, p. 47.
 
This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Neutron_depth_profiling". A list of authors is available in Wikipedia.